* This is a Pspice model for a nominal P850G-120WH TBU * The properties of this device are as follows: * Itrip = 150mA * R = 50ohms * Max Voltage = 850V * Quiescent current @50V = 850uA *SPICE MODEL LICENSE AGREEMENT * *IMPORTANT NOTICE: *YOUR access to SPICE MODELS created by Bourns, Inc., a California corporation (“Bourns”), is conditioned on YOUR acceptance of and agreement to comply with the terms of this SPICE Model License Agreement (this “Agreement”). YOU confirm your acceptance of and agreement to comply with this Agreement by clicking on the “AGREE” button below and downloading a SPICE MODEL from the Bourns website. *AGREEMENT *1. As used herein, “YOU” and “YOUR” refer both to you as an individual and any entity on whose behalf you are downloading a SPICE MODEL. *2. The information in each SPICE MODEL is protected under United States copyright laws. 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Each downloaded SPICE MODEL is protected by copyright laws, and Bourns does not consent to the licensing of patent rights or other intellectual property rights (including those of third parties). *5. This Agreement shall be governed by and construed in accordance with the laws of the State of California, without regard to its choice of law provisions. The sole jurisdiction and venue for all actions related to the subject matter of this Agreement shall be the state and federal courts located in Riverside County, California. *6. The United Nations Convention on Contracts for the International Sale of Goods is excluded in its entirety from this Agreement. *7. The term of this Agreement shall commence when YOU download a SPICE MODEL and shall terminate when YOU stop using the downloaded SPICE MODEL, except that the provisions of Sections 3, 4 and 5 shall survive the termination of this Agreement. * ************************************************************************************* ************************************************************************************* ** While extensive analysis has been carried out to provide a Spice model that ** ** is representative of the physical device, the performance of this model does ** ** not guarantee the performance of the actual device. ** ** All modelled results should be confirmed with bench measurements. ** ************************************************************************************* ************************************************************************************* * * * Author: Andy Morrish 16/06/10 * Email: Andy.Morrish@Bourns.com * Version: 1.1 * X1 TI TO P850G_120_WH_NOM * .SUBCKT P850G_120_WH_NOM TI TO PARAMS: BV=850 V200M={-1.8} R1 TI 3 800K R2 3 TO 800K RQ 2 1 3K X1 1 2 3 IJ X2 TI 1 2 IN_4 PARAMS: V200MA={V200m} BV={BV} X3 TO 2 1 IN_4 PARAMS: V200MA={V200m} BV={BV} ************************************************************************************* ************************************************************************************* ** IMPORTANT NOTE ** ** For LTSpice and general charge control nonlinear capacitance models use the ** ** charge control format for the nonlinear capacitance definition ** ** where Cnnn defines the capacitance through the charge definition. ** ** ** ** For simulators that allow direct nonlinear capacitance models use the ** ** nonlinear capacitance definition for C_TBU, which defines capacitance as a ** ** function of the capacitance voltage ** ** ** ** COMMENT OUT EITHER Cnnn_TBU or C_TBU ** ** DO NOT ATTEMPT TO USE BOTH!!!! ** ************************************************************************************* ************************************************************************************* *Cnnn_TBU ti to Q=8n*3.3*atan(x/3.3) C_TBU ti to 8n*(3.3^2)/((3.3^2)+(v(C_TBU)^2)) .ENDS P850G_120_WH_NOM * * .SUBCKT IJ J1 J2 J3 PARAMS: VJX=8 JLBD=0.02 JKX=.17 BVJ=25 CJ=80P D1 J1 J3 DJ D2 J2 J3 DJ G4 J1 J2 VALUE = + {IF(V(J1)>V(J2),IF((V(J3)-V(J1))>{VJX},0,IF(V(J1)-V(J2)>{VJX}-V(J3)+V(J1),(({JKX + }*0.05)*(V(J3)-V(J1)-{VJX})*(V(J3)-V(J1)-{VJX})*(1+({JLBD}*(V(J1)-V(J2))))),(( + {JKX}*0.05)*(V(J1)-V(J2))*((2*(V(J1)-V(J3)+{VJX}))-(V(J1)-V(J2)))*(1+({JLBD}*(V + (J1)-V(J2))))))),(IF((V(J3)-V(J2))>{VJX},0,IF(V(J2)-V(J1)>{VJX}-V(J3)+V(J2),-(( + {JKX}*0.05)*(V(J3)-V(J2)-{VJX})*(V(J3)-V(J2)-{VJX})*(1+({JLBD}*(V(J2)-V(J1))))), + -(({JKX}*0.05)*(V(J2)-V(J1))*((2*(V(J2)-V(J3)+{VJX}))-(V(J2)-V(J1)))*(1+({JLBD}* + (V(J2)-V(J1)))))))))} R1 J3 J1 1E12 .MODEL DJ D (BV={BVJ} CJO={{CJ}*{JKX}} IBV=100.000001P IS=29.054902P M=385.099444M + N=1.42535 RS=910.705882M TT=5U VJ=700M) .ENDS IJ * .SUBCKT IN_4 XQ2 XQ3 XQ1 +PARAMS: V200MA={-1.8} LBDA=0.01 KQ=0.2255 CDIODE=50P BV=850 RX=3.3 RS=1.0 CP=500P CX=30P .PARAM VQH={V200MA-0.18} .PARAM KN1={KQ*0.28*3.3} .PARAM KN2={KQ*0.1*3.3} .PARAM KN3={KQ*15E-3*3.3} .PARAM KN4={KQ*1.6E-3*3.3} D1 XQ1 XQ2 DN C1 7 XQ1 {{CP}*{KQ}} R1 1 XQ2 {{RX}*9/(7/{BV}/{BV}*650*650/3)/{KQ}/3.18} R2 3 XQ2 {{RX}*20/(7/{BV}/{BV}*650*650/3)/{KQ}/3.06} R3 4 XQ2 {{RX}*200/(7/{BV}/{BV}*650*650/3)/{KQ}/3.06} R4 5 XQ2 {{RX}*3000/(7/{BV}/{BV}*650*650/3)/{KQ}/3.06} R5 9 XQ2 {{RX}/(7/{BV}/{BV}*650*650/3)/{KQ}*3} RS XQ3 7 {{RS}/{KQ}} XM1 XQ1 1 7 IN PARAMS: VNH={vqh-.03} LBD={lbda} KN={kn1} XM2 XQ1 3 7 IN PARAMS: VNH={vqh-0.35} LBD={lbda} KN={kn2} XM3 XQ1 4 7 IN PARAMS: VNH={vqh-.65} LBD={lbda} KN={kn3} XM4 XQ1 5 7 IN PARAMS: VNH={vqh-0.95} LBD={lbda} KN={kn4} .MODEL DN D (BV={BV} CJO={{CDIODE}*{KQ}} IBV=100.000001P IS=3.507061N M=10.5 + N=1.695189 RS=121.232918M TT=4.760894N VJ=700M) .ENDS IN_4 * .SUBCKT IN XN1 XN2 XN3 PARAMS: VNH={-1} LBD=0.01 KN=1 G2 xn2 xn1 VALUE = + {IF(V(XN2)>V(XN1),IF((V(XN3)-V(XN1))<{VNH},0,IF(V(XN2)-V(XN1)>V(XN3)-V(XN1)-{VNH + },({KN}*(V(XN3)-V(XN1)-{VNH})*(V(XN3)-V(XN1)-{VNH})*(1+({LBD}*(V(XN2)-V(XN1))))) + ,({KN}*(V(XN2)-V(XN1))*((2*(V(XN3)-V(XN1)-{VNH}))-(V(XN2)-V(XN1)))*(1+({LBD}*(V + (XN2)-V(XN1))))))),(IF((V(XN3)-V(XN2))<{VNH},0,IF(V(XN1)-V(XN2)>V(XN3)-V(XN2)- + {VNH},-({KN}*(V(XN3)-V(XN2)-{VNH})*(V(XN3)-V(XN2)-{VNH})*(1+({LBD}*(V(XN1)-V(XN2 + ))))),-({KN}*(V(XN1)-V(XN2))*((2*(V(XN3)-V(XN2)-{VNH}))-(V(XN1)-V(XN2)))*(1+( + {LBD}*(V(XN1)-V(XN2)))))))))} R1 xn1 xn3 1E12 R2 xn1 xn2 1E8 .ENDS IN