Insulated Gate Bipolar Transistors (IGBTs):

• Discrete IGBTs co-packed with FRD
• Advanced Trench-Gate Field-Stop (TGFS) technology
• Low saturation voltage drop (V_ce(sat))
• Low switching loss
• TO-252, TO-247 and TO-247N packages

Bourns® IsoMOV™ Component Features:

• Space-saving form factor
• Ultra-low leakage current
• Lower clamping voltage
• Isolation GDT extends MOV life
• Passes ring-wave requirement
• State-of-the-art surge ratings
• High temperature rating
• Graceful end-of-life failure mode

Bourns high-quality components are designed to meet BMS requirements for:

• Isolated communications
• High voltage support
• Effective protection
• Wide temperature range
• Accurate current sensing