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Insulated Gate Bipolar Transistors (IGBTs)

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The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop technology providing greater control of the dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure increases the robustness of the device and gives a lower RTH. The Bourns® IGBT solution is suitable for SMPS, UPS and PFC applications.

Series Data Sheet Photo Package Feature VCE [V] IC
@ T=100 ˚C
[A]
Typ. VCE(sat)
@ Ic, Vge=15 V
[V]
IF
@ T=100 ˚C
[A]
Operating Junction Temperature MDS Design Files Engineering Buy Now
BIDD05N60T BIDD05N60T bidd05n60t TO-252 Medium speed 600 5 1.5 N/A –55 °C to +150 °C BIDD05N60T Downloads Buy
BIDW20N60T BIDW20N60T bidw20n60t TO-247 Medium speed 600 20 1.7 20 –55 °C to +150 °C BIDW20N60T Downloads Buy
BIDW30N60T BIDW30N60T bidw20n60t TO-247 Medium speed 600 30 1.65 30 –55 °C to +150 °C BIDW30N60T Downloads Buy
BIDW50N65T BIDW50N65T bidw20n60t TO-247 Medium speed 650 50 1.65 50 –55 °C to +150 °C BIDW50N65T Downloads Buy
BIDNW30N60H3 BIDNW30N60H3 bidnw30n60h3 TO-247N High speed 600 30 1.65 12 –55 °C to +150 °C BIDNW30N60H3 Downloads Buy
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